Tuesday 4 April 2017

10:00 AM CEST (Paris), 9:00 AM BST (London), 4 PM CST (Beijing),

5:00 PM CEST (Paris), 4:00 PM BST (London), 11 AM EDT (New-York), 8 AM PDT (Los Angeles) 


This is an online event. 

The connection information will be sent to you after your registration.


HORIBA Scientific 


Agnes Tempez, PhD., PP-TOFMS product manager, HORIBA Scientific


Yann Mazel, Metrology engineer, CEA LETI                      

Emmanuel Nolot, PhD., Metrology leader, CEA-LETI 

Plasma Profiling TOFMS (PP-TOFMS) is a novel technique for material characterization that provides ultra-fast and direct elemental composition as a function of depth. We will show you through numerous examples the potential of PP-TOFMS for the development of your thin films and devices, from growth to processing.

Key Learning Objectives

  • Become familiar with the essential characteristics of this technique (speed, sensitivity, resolution)
  • Learn how PP-TOFMS will be complementary to your current chemical profiling techniques (XPS, SIMS, SEM-EDX, RBS)
  • Demonstrate how useful PP-TOFMS can be as a quick, close-loop process tool

Who Should Attend?

  • Academic material research scientists and R&D engineers working in semiconductors, microelectronics, photonics, photovoltaics
  • Metrology managers and engineers, surface scientists, XPS, SIMS, AES users